PRODUCT AND APPLICATIONS
—— GaN/Si Epitaxy Products ——
100V~1200V GaN Epitaxy on silicon substrate
/ SPC Control
/ Professional services team with mass production experience
/ Product without patent infringement as we know
/ Fully control the epi quality by surface mapping and XRD test
/ Low wafer bowing reduce crack risk during device process
/ Low defect trap to avoid current collapse
/ Low sheet resistance to improve device current density
Based on advanced MOCVD epitaxial platform and proprietary buffer layer technology, we can provide
■ 4-8 inch silicon / silicon carbide / Sapphire / GaN HEMT Epitaxial Wafers；
■ 100V/400V/600V/900V/1200VEpitaxial Wafers with various breakdown voltage specifications；
■ 5G/6GRF epitaxial wafer；
■ Depleted, pGaN enhanced and various custom-made Epitaxial plates；
