技术与服务
制程能力
技术与服务
✔ 外延掺杂剂：N型和P型
✔ 外延片尺寸：4 inch~12inch
✔ 外 延 膜 厚：0.5~150μm
✔ 外延电阻率：0.01~200 ohm-cm
Epi Thickness
| ltem | Single | Mini batch |
| Within wafer | 1.00% | 2.00% |
| Wafer to wafer | 2.00% | 2.00% |
| Run to Run | / | 2.00% |
Epi Resistivity
| Range | ltem | Single | Mini batch |
0.01~5.0 ohm~cm | Within wafer | 2.00% | 2.00% |
| Wafer to wafer | 1.50% | 2.00% | |
| Run to Run | / | 1.50% | |
5.0~50 ohm~cm | Within wafer | 2.50% | 2.50% |
| Wafer to wafer | 2.00% | 2.50% | |
| Run to Run | / | 2.00% |
✔ 外延掺杂剂：N型和P型
✔ 外延片尺寸：4 inch~12inch
✔ 外 延 膜 厚：0.5~150μm
✔ 外延电阻率：0.01~200 ohm-cm
Epi Thickness
| ltem | Single | Mini batch |
| Within wafer | 1.00% | 2.00% |
| Wafer to wafer | 2.00% | 2.00% |
| Run to Run | / | 2.00% |
Epi Resistivity
| Range | ltem | Single | Mini batch |
0.01~5.0ohm~cm | Within wafer | 2.00% | 2.00% |
| Wafer to wafer | 1.50% | 2.00% | |
| Run to Run | / | 1.50% | |
5.0~50 ohm~cm | Within wafer | 2.50% | 2.50% |
| Wafer to wafer | 2.00% | 2.50% | |
| Run to Run | / | 2.00% |
依据先进的MOCVD外延平台和专有的缓冲层技术，可提供
✔ 4 inch~8 inch 硅基/碳化硅基/蓝宝石基/氮化镓HEMT外延片；
✔ 100V/400V/600V/900V/1200V各种击穿电压规格外延片；
✔ 5G/6G射频外延片；
✔ 耗尽型、pGaN增强型及各种定制结构外延片；
✔ 外延掺杂剂：N型和P型；
✔ 外延片尺寸：4 inch 、6 inch；
✔ 外 延 膜 厚：0.5~50um；
✔ 外 延 浓 度：1E14-1E19/cm3
| lten | ltem | spec | typical |
Thickness Uniformity | Within wafer | 3.00% | 1.00% |
| Wafer to wafer | 3.00% | 2.00% | |
Dopant concentration Uniformity | Within wafer | 6.00% | 4.00% |
| Wafer to wafer | 6.00% | 4.00% |
✔ 外延掺杂剂：N型和P型；
✔ 外延片尺寸：4 inch 、6 inch；
✔ 外 延 膜 厚：0.5~50um；
✔ 外 延 浓 度：1E14-1E19/cm3
| lten | ltem | spec | typical |
Thickness Uniformity | Within wafer | 3.00% | 1.00% |
| Wafer to wafer | 3.00% | 2.00% | |
Dopant concentration Uniformity | Within wafer | 6.00% | 4.00% |
| Wafer to wafer | 6.00% | 4.00% |
